t4 - lds -03 01 , rev . 1 ( 6/ 25/ 13 ) ?201 3 microsemi corporation page 1 of 6 1N5818-1, 1n5819-1, 1n6759-1 C 1n6761-1 and dsb1a20 C dsb1 a100 available on commercial versions 1 amp schottky barrier rectifiers qualified per mil - prf - 19500/ 586 qualified levels * : jan, jantx, jantxv and jans description this 1 amp s chott ky barrier rectifier is metallurgically bonded and offers military grade qualifications for the part numbers of 1n5819 - 1 and 1n6761 - 1 for high - reliability applications . this small diode is hermetically sealed and bonded into a do - 41 glass package. do - 41 package also available in : do - 213ab package (surface mount) 1n5819 ur -1, 1n6761 ur -1 and cdll variants important: for the latest information, visit our website http://www.microsemi.com . features ? jedec registered 1n5818, 1n5819 and 1n6759 thr ough 1n6761 numbers. ? hermetically sealed do - 41 glass package. ? metallurgically bonded. ? * 1n5819 - 1 and 1n6761 - 1 only are available in ja n, jantx, jantxv and jans qualifications per mil - prf - 19500/586. (s ee part nomenclature for all available options.) ? rohs compliant versions available (commercial grade only) . applications / benefits ? small siz e for high density mounting using flexible thru - hole leads (see package illustration). ? low reverse (leakage) currents. ? non - sensitive to esd per mil - std - 750 t est m ethod 1020 (human body model) . ? inherently radiation hard as described in microsemi micronote 050 . maximum ratings @ t a = +25 oc unless otherwise specified msc C law rence 6 lake street, lawrence, ma 01841 tel: 1- 800 - 446 - 1158 or (978) 620 - 2600 fax: (978) 689 - 0803 msc C ireland gort road business park, ennis, co. clare, ireland tel: +353 (0) 65 6840044 fax: +353 (0) 65 6822298 website: www.microsemi.com parameters/test conditions symbol value unit storage temperature t stg - 65 to +150 oc junction temperature 1n5819 -1 1n6761 -1 t j - 65 to +125 - 65 t o +150 oc thermal resistance, junction - to - lead @ lead length = 0.375 inch (9.52 mm) from body r ? jl 70 oc /w thermal resistance, junction - to - ambient r ? ja 220 oc /w average rectified output current (1) i o 1.0 a surge peak forward current i fsm 25 a solder temperature @ 10 s 260 o c note: 1. t l = 45oc for the 1n5819 - 1 and t l = 55oc for the 1n 6761 - 1. downloaded from: http:///
t4 - lds -03 01 , rev . 1 ( 6/ 25/ 13 ) ?201 3 microsemi corporation page 2 of 6 1N5818-1, 1n5819-1, 1n6759-1 C 1n6761-1 and dsb1a20 C dsb1 a100 mechanical and packaging ? case: hermetically sealed voidless hard glass with tungsten slugs. ? terminals: tin/lead or rohs compliant matte/tin (commercial grade only) over copper. ? marking: body coated in blue with part number. ? polarity: catho de indicated by band. ? tape & reel option: standard per eia - 296. consult factory for quantities. ? weight: approximately 340 milligrams. ? see p ackage d imensions on last page. part nomenclature jan 1n5 819 -1 (e3) reliability level jan = jan level * jantx = jantx level * jantxv = jantxv level * jans = jans level * *(applicable only to 1n5819 - 1 and 1n6761 - 1 numbers) blank = commercial grade jedec type number (s ee electrical c haracteristic s t able ) rohs compliance e3 = rohs c ompliant (on commercial grade only) blank = non - rohs c ompliant metallurgically bonded dsb 1a 20 (e3) diode schottky barrier amp rating working peak reverse voltage rating ( v rwm ) ro hs compliance e3 = rohs c ompliant blank = non - rohs c ompliant symbols & definitions symbol definition c t total capacitance: the total small signal capacitance between the diode terminals of a compl ete device. f frequency i fsm surge peak forward current: the forward current including all nonrepetitive transient currents but excluding all repetitive transients (ref jesd282-b) i r reverse current: the dc current flowing from the external circuit into the cathode terminal at the specified v oltage v r . i o average rectified output current: the o utput c urrent averaged over a full cycle with a 50 hz or 60 hz sine - wave input and a 180 degree conduction angle. v (br) minimum breakdown voltage: the minimum voltage the device will exhibit at a specified current. v f forward voltage: the positive anode - cathode voltage the device will exhibit at a specified i f current. v r reverse voltage: the dc voltage applied in the reverse direction below the breakdown region. v rwm working peak reverse voltage: the maximum peak voltage that can be applied over the operating t emperature range excluding all transient voltages (ref jesd282 - b). also sometimes known as piv. downloaded from: http:///
t4 - lds -03 01 , rev . 1 ( 6/ 25/ 13 ) ?201 3 microsemi corporation page 3 of 6 1N5818-1, 1n5819-1, 1n6759-1 C 1n6761-1 and dsb1a20 C dsb1 a100 * electrical characteri stics @ t a = 25 c unless otherwise specified type number working peak reverse voltage (1) maximum forward voltage maximum reverse leakage current at rated voltage maximum capacitance @ v r = 5 volts f 1.0 mhz v rwm v f @ 0.1a v f @ 1.0 a c t i rm @ 25c i rm @ 100c c t volts volts volts pf ma ma pf 1n5818 -1* 30 0.36 0.60 0.9 0.10 5.0 ? 1n5819 -1 45 0.34 0.49 0.8 0.05 5.0 70 1n6759 -1 60 0.38 0.69 na 0.10 6.0 1n6760 -1 80 0.38 0.69 na 0.10 6.0 ? 1n6761 -1 100 0.38 0.69 na 0.10 12.0 70 dsb1a20 20 0.36 0 .60 0.9 0.10 5.0 dsb1a30 30 0.36 0.60 0.9 0.10 5.0 dsb1a40 40 0.36 0.60 0.9 0.10 5.0 dsb1a50 50 0.36 0.60 0.9 0.10 5.0 dsb1a60 60 0.38 0.69 na 0.10 12.0 dsb1a80 80 0.38 0.69 na 0.10 12.0 dsb1a100 100 0.38 0.69 na 0.10 12.0 *this part number m ay also be ordered through the number of dsb5818. ? also available with jan, jantx, jant x v, and jans military qualifications . downloaded from: http:///
t4 - lds -03 01 , rev . 1 ( 6/ 25/ 13 ) ?201 3 microsemi corporation page 4 of 6 1N5818-1, 1n5819-1, 1n6759-1 C 1n6761-1 and dsb1a20 C dsb1 a100 graphs t j , junction temperature (oc) figure 1 typical reverse leakage current at rated piv (pulsed) v f , forward voltage, instantaneous (volts) figure 2 typical forward voltage for 1n5819 -1 i r , reverse current (ma) i f , forward current, instantaneous (amps) downloaded from: http:///
t4 - lds -03 01 , rev . 1 ( 6/ 25/ 13 ) ?201 3 microsemi corporation page 5 of 6 1N5818-1, 1n5819-1, 1n6759-1 C 1n6761-1 and dsb1a20 C dsb1 a100 graphs (continued) time (s) figure 3 thermal impedance for 1n5819 - 1 and 1n6761 - 1 (do - 41) theta ( oc /w ) downloaded from: http:///
t4 - lds -03 01 , rev . 1 ( 6/ 25/ 13 ) ?201 3 microsemi corporation page 6 of 6 1N5818-1, 1n5819-1, 1n6759-1 C 1n6761-1 and dsb1a20 C dsb1 a100 packag e dimensions notes: 1. dimensions are in inches. millimeters are given for information only. 2. package contour optional with bd and length bl. s lugs, if any, shall be included within this cylinder length but shall not be subject to minimum limit of bd . 3. lead diameter not controlled in this zone to allow for flash, lead finish build - up, and minor irregularities other than slugs. 4. in accordance with asme y14.5m, diameters are equivalent to x symbology. dimensions ltr inch millimeters notes min max min max bd 0 .080 0 .107 2.03 2.72 2 bl 0 .160 0 .205 4.06 5.21 2 ld 0 .028 0 .034 0.71 0.86 ll 1.000 - 25.40 - lu - 0 .050 - 1.27 3 downloaded from: http:///
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